sot-89 plastic-encapsulate transistors transistor(pnp) features z large collector power dissipation p c z maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55~ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=-2ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe(1) v ce =-10v,i c =-500ma 85 340 dc current gain h fe(2) v ce =-5v,i c =-1a 50 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -0.85 -1.2 v transition frequency f t v ce =-10v,i c =-50ma,f=200mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 making bq br bs sot-89 1. base 2. collector 3. emitter 1 2 3 2012- 0 willas electronic corp. 2SB766A preliminary
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) sot-89 plastic-encapsulate transistors 2SB766A 2012- 0 willas electronic corp. preliminary
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